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features mcu features mcu operating voltage with rf transmitter: f sys = 8mhz: 2.2v~3.6v f sys = 12mhz: 2.7v~3.6v up to 0.33 s instruction cycle with 12mhz system clock power down and wake-up functions to reduce power consumption five oscillators: external high speed xtal external 32.768khz xtal external rc internal high speed - no external components internal 32khz - no external components multi-mode operation: normal, slow, idle and sleep fully integrated internal 4mhz, 8mhz and 12mhz oscillator all instructions executed in one or two instruction cycles table read instructions 63 powerful instructions up to 4 subroutine nesting levels bit manipulation instruction flash program memory: 1k 14 ram data memory: 64 8 eeprom memory: 64 8 watchdog timer function up to 8 bidirectional i/o lines external interrupt pin shared with i/o pin multiple timer modules for time measure, input capture, compare match output, pwm output or single pulse output functions comparator function dual time-base functions for generation of fixed time interrupt signal low voltage reset function low voltage detect function multi-channel 12-bit resolution a/d converter package type: 16-pin nsop rf transmitter features complete uhf ask/ook transmitter frequency range 300mhz to 450mhz data rates more than 10k bps output power up to 10dbm low voltage operation - down to 2.2v data tracking function for power saving reference clock output for mcu irc clock synchronisation HT66F03T3/ht68f03t3 8-bit flash mcu with rf transmitter rev. 1.30 1 july 4, 2011
general description these devices provide a combination of a fully featured mcu plus an rf transmitter function, giving them great flexibility for use in wide range of wireless i/o control applications such as industrial control, consumer products, subsystem controllers, etc. analog features include a multi-channel 12-bit a/d converter. multiple and extremely flexible timer/event counters provide full timing functions. protective features such as an internal watchdog timer and low voltage reset coupled with excellent noise immunity and esd protection ensure that reliable operation is maintained in hostile electrical environments. an extensive choice of oscillator functions are provided including a fully integrated system oscillator which requires no external components for its implementation. the ability to operate and switch dynamically between a range of operating modes using different clock sources gives users the ability to optimise microcontroller operation and minimise power consumption. the devices also include flexible i/o programming features time-base functions and a range of other features. the rf transmitter is a high performance and easy to use transmitter operating in the 300mhz to 450mhz frequency band. one only needs to add a crystal reference frequency, and a limited number of external components to create a complete and versatile rf transmitter system. the device is capable of delivering more than +9 dbm into a 50 load. such a power level enables a small form factor transmitter to operate near the maximum limit of the transmission regulations. the device can operate with ask - amplitude shift keying, and ook - on-off keying, uhf receiver types from wide-band super-regenerative radios to narrow-band, high performance super-heterodyne receivers. the data rate is higher than 10kbps, allowing the device to support more complicated control protocols. for enhanced power saving, the device includes a data tracking function. the data tracking function enables the pll to be activated as long as high transient data input trigger signals are received. the pll will also be automatically switched off if there are no data input transients for a time exceeding approximately 300ms. as the rf transmitter will also generate a synchronising signal, the mcu can use its internal rc clock rather than using an additional crystal for the mcu system clock. these features add up to ensure that the devices can offer excellent capabilities in terms of functionality and power-saving as well as being highly cost effective in a huge range of remote wireless applications selection guide most features are common to all devices, the main feature distinguishing them are memory capacity and a/d converter. the following table summarises the main features of each device. part no. program memory data memory data eeprom i/o external interrupt a/d converter timer module comparator rf transmitter stack package ht68f03t3 1k 14 64 864 87 1 10-bit ctm 1 10-bit stm 1 4 16nsop HT66F03T3 1k 14 64 864 8 7 1 12-bit4 10-bit ctm 1 10-bit stm 1 12-bit4 4 16nsop rev. 1.30 2 july 4, 2011 HT66F03T3/ht68f03t3 8-bit flash mcu with rf transmitter
block diagram the following block diagram illustrates the dual-chip structure of the devices, where an individual mcu and rf transmitter devices are combined into a single package. HT66F03T3/ht68f03t3 8-bit flash mcu with rf transmitter rev. 1.30 3 july 4, 2011
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internal chip interconnection diagram note: the an0~an3 and vref shared-pin functions only exist in the HT66F03T3 device.
pin assignment pin description HT66F03T3 pin name function op i/t o/t pin-shared mapping pa0~pa7 port a pawu papu st cmos an0~an3 a/d converter input acerl an pa0~pa3 vref a/d converter reference input adcr1 an pa1 c- comparator input cpc an pa1 c+ comparator input an pa0 cx comparator output cmos pa2 tck0 tm0 input prm st pa4, pa6 or pa7 tck1 tm1 input prm st pa3 or pa7 tp0 tm0 i/o prm st cmos pa3, pa5 or pa2 tp1 tm1 i/o prm st cmos pa4, pa6 or pa7 int external interrupt prm st pa3 or pa7 osc1 hxt/erc/lxt pin co hxt/lxt pa6 osc2 hxt/lxt pin co hxt/lxt pa5 res reset input co st pa7 vdd mcu power supply pwr vss mcu ground pwr paout rf power amplifier output pwr nso dout data output pawu papu st cmos pa4 cref rf transmitter synnchronising signal cmos xout rf transmitter crystal pin hxt xin rf transmitter crystal pin hxt avdd rf transmitter power supply pwr avss rf transmitter ground pwr note: i/t: input type; o/t: output type op: optional by configuration option (co) or register option pwr: power; co: configuration option; st: schmitt trigger input; ns: non-standard input cmos: cmos output; nmos: nmos output scom: software controlled lcd com; an: analog input pin hxt: high frequency crystal oscillator lxt: low frequency crystal oscillator nso: non-standard output rev. 1.30 4 july 4, 2011 HT66F03T3/ht68f03t3 8-bit flash mcu with rf transmitter , : 4 2 5 4 7 / 5 4 7 ) 5 4 ) 5
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ht68f03t3 pin name function op i/t o/t pin-shared mapping pa0~pa7 port a pawu papu st cmos c- comparator input cpc an pa1 c+ comparator input an pa0 cx comparator output cmos pa2 tck0 tm0 input prm st pa4, pa6 or pa7 tck1 tm1 input prm st pa3 or pa7 tp0 tm0 i/o prm st cmos pa3, pa5 or pa2 tp1 tm1 i/o prm st cmos pa4, pa6 or pa7 int external interrupt prm st pa3 or pa7 osc1 hxt/erc/lxt pin co hxt/lxt pa6 osc2 hxt/lxt pin co hxt/lxt pa5 res reset input co st pa7 vdd mcu power supply pwr vss mcu ground pwr paout rf power amplifier output pwr nso dout data output pawu papu st cmos pa4 cref rf transmitter synnchronising signal cmos xout rf transmitter crystal pin hxt xin rf transmitter crystal pin hxt avdd rf transmitter power supply pwr avss rf transmitter ground pwr note: i/t: input type; o/t: output type op: optional by configuration option (co) or register option pwr: power; co: configuration option; st: schmitt trigger input; ns: non-standard input cmos: cmos output; nmos: nmos output scom: software controlled lcd com; an: analog input pin hxt: high frequency crystal oscillator lxt: low frequency crystal oscillator nso: non-standard output HT66F03T3/ht68f03t3 8-bit flash mcu with rf transmitter rev. 1.30 5 july 4, 2011
absolute maximum ratings operating supply voltage ........................................................................................v dd =2.0v~3.3v voltage on i/o pins ........................................................................................v ss -0.3v to v dd +0.3v storage temperature range .......................................................................................-50 cto125 c lead temperature (soldering, 10 seconds) ............................................................................+300 c esd rating...................................................................................................................... .............3kv ambient operating temperature (ta).......................................................................-40 cto+85 c programmable transmitter frequency ran.......................................................300mhz to 450mhz note: these are stress ratings only. stresses exceeding the range specified under absolute maximum rat - ings may cause substantial damage to the device. functional operation of the device at other condi - tions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability. d.c. characteristics ta=25 c symbol parameter test conditions min. typ. max. unit v dd conditions v dd operating voltage (hxt, erc, hirc) f sys =8mhz 2.2 3.6 v f sys =12mhz 2.7 3.6 v av dd rf transmitter power supply 2.0 3.6 v i dd operating current (hirc) 3v no load, f sys =8mhz, adc disable, wdt enable 1.2 2.0 ma 3v no load, f sys =12mhz, adc disable, wdt enable 1.8 3.0 ma i stb standby current (idle) (lirc), (f sys =off, f s =f sub =f lirc ) 3v no load, system halt, f sys =32768hz 1.3 3.0 a v il1 input low voltage for i/o ports, tckx and int 0 0.3v dd v v ih1 input high voltage for i/o ports, tckx and int 0.7v dd v dd v v il2 input low voltage (res ) 0 0.4v dd v v ih2 input high voltage (res ) 0.9v dd v dd v v lvr1 low voltage reset lvr enable, 2.10v option 5% 2.10 +5% v v lvr2 lvr enable, 3.15v option 5% 3.15 +5% v r ph pull-high resistance for i/o ports 3v 20 60 100 k rev. 1.30 6 july 4, 2011 HT66F03T3/ht68f03t3 8-bit flash mcu with rf transmitter
a.c. characteristics ta=25 c symbol parameter test conditions min. typ. max. unit v dd conditions f sys system clock (hirc) 3v ta= 40 c~85 c 15% +5% mhz f timer timer i/p frequency (tmr) 2.2v~3.6v 0 8 mhz 2.7v~3.6v 0 12 mhz t res external reset low pulse width 1 s t sst system start-up timer period wake-up from halt 15~16 t sys t lvr low voltage width to reset 120 240 480 s note: t sys =1/f sys a/d converter electrical characteristics ta=25 c symbol parameter test conditions min. typ. max. unit v dd conditions v adc a/d operating voltage v ref =v adc 2.7 3.6 v v adi a/d converter input voltage 0 v ref v v ref a/d converter reference voltage 2 v adc v t adck a/d converter clock period 2.2v~ 3.6v 0.5 10 s t ads a/d converter sampling time 2.7v v ref =v adc =v dd , t ad =0.5 s (calculated on best-fit line) 4 t adck 3v rf transmitter electrical characteristics specifications apply for av dd =3.0v, ta = 25 c, freq x
tal osc=13.560mhz, data is transmitting. bold values indicate -20 cto70 c unless otherwise noted. 1kbps data rate 50% duty cycle. rl 50 load (matched) symbol parameter test conditions min. typ. max. unit av dd conditions i i data high current 3v @315mhz, pout=+10dbm 12.5 ma @433.92mhz 12.5 ma i o data low current 3v @315mhz 3.0 ma @433.92 mhz 3.0 ma i stb en low & din low current 3v @315mhz 1.0 a @433.92 mhz 1.0 a rf and crystal output power level 3.3v @315mhz * 9.5 dbm @433.92mhz * 9.5 dbm HT66F03T3/ht68f03t3 8-bit flash mcu with rf transmitter rev. 1.30 7 july 4, 2011
symbol parameter test conditions min. typ. max. unit av dd conditions harmonics output for 315 mhz 3v @630mhz, 2nd harm 48 dbc @945mhz, 3rd harm 60 dbc harmonics output for 433.92mhz 3v @867.84mhz, 2nd harm 45 dbc @1301.76mhz, 3rd harm 55 dbc extinction ratio for ask 10kbps 3v 70 dbc data rate 3v 10 kbps occupied bandwidth 3v @315mhz <900 khz @433.92mhz <1000 khz 315mhz single side band phase noise 3v 100khz from carrier 78 dbc/hz 1000khz from carrier 77 dbc/hz 433.92mhz single side band phase noise 3v 100khz from carrier 78 dbc/hz 1000khz from carrier 76 dbc/hz xtlin, xtlout 3v pin capacitance 2 pf output blanking 3v standby transition from low to high ** 500 s ask to rf out response time 3v delta between ask input transition from low to high to rf output transition from low to high 1 s cref clock output frequency 3v @315mhz 150 hz @433.92mhz 207 hz note: * depend on pc board layout ** generally limited by crystal power-on reset characteristics ta=25 c symbol parameter test conditions min. typ. max. unit v dd conditions v por vdd start voltage to ensure power-on reset 100 mv r por ac vdd raising rate to ensure power-on reset 0.035 v/ms t por minimum time for vdd stays at v por to ensure power-on reset 1 ms rev. 1.30 8 july 4, 2011 HT66F03T3/ht68f03t3 8-bit flash mcu with rf transmitter 1 - - 1

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functional description as these device packages contain different chips internally, for a detailed functional description, users must refer to the relevant datasheets for the related mcu. the following table shows which individual devices are inside each package. device mcu HT66F03T3 ht66f03 ht68f03t3 ht68f03 multi-chip internal devices one of the mcu i/o pins, pa4, is internally connected to the data input pin, din, of rf transmitter chip and should therefore be setup as an output by the mcu. this pin is used to generate the encoding data. there are some special considerations which need to be taken into account when using these devices. these points will be mentioned in the hardware and software consideration sections. hardware considerations as these devices are composed of an individual mcu and rf transmitter, using them together requires the user to take care of some special points. absolute maximum ratings the absolute maximum ratings must be checked for discrepancies and the necessary care taken in device handling and usage. power supply examination of the block diagram will reveal that the power supply and ground pins of the rf transmitter and mcu are independent and must be connected together if they are to share the same power supply. if the same power supply is to be used for both chips then care must be taken as the maximum power supply voltage of the rf transmitter is less than the maximum mcu power supply voltage. also note that higher mcu system clock frequencies may require mcu power supply voltages that exceed the rf transmitter maximum power supply voltage. for this reason it will not be possible to operate the mcu at its maximum system clock frequency if the mcu shares the same power supply as the rf transmitter. when calculating the total current consumption of the device, the specified currents of the mcu part and the rf part in the dc specifications, must be added together. similarly, the standby current is the sum of the two individual chip standby currents. operation the rf data to be transmitted is derived from the pa4 line. when the pa4 line is high the rf transmitter will transmit it data allowing users to program their encoded data on this line. if the rf transmitter is in its standby mode then there will be a delay of about 500us before transmission begins. when the device is transmitting, a synchronising signal will be generated on the cref pin which can be connected externally to an mcu i/o pin for calibration of the mcu internal rc oscillator. to avoid the rf circuits entering an unknown state, pin pa4 should be setup as an output as soon as possible after power-on. to minimise power consumption, only when pa4 is high, can the rf signal be transmitted and the reference clock on cref be generated. if no data transitions are generated on pa4 for 300~500ms, the transmitter will enter a standby state and the rf circuits will be switched off along with the internal pll to save power. the signal generated on the cref pin will also remain at a low level. the internal pll function is used to generate the rf frequency with a multiplier of 32 times the crystal frequency. the relationship is: rf frequency = 32 x crystal frequency. therefore a 9.84375mhz crystal will HT66F03T3/ht68f03t3 8-bit flash mcu with rf transmitter rev. 1.30 9 july 4, 2011
generate an rf frequency of 315mhz and a13.56mhz crystal will generate an rf frequency of 433.92mhz. all pll circuits are contained within the device and the only external component required is a suitable crystal. power down and wake up it is important to note that if the mcu is powered down or placed into a low power mode to conserve power, that the rf transmitter may continue running and will consume a certain amount of power. before powering down the mcu it is important to carefully manage the pa4 pin to ensure the rf-transmitter enters its power down state. unbonded mcu pins examination of the relevant mcu datasheet will reveal that not all of the mcu i/o port lines are bonded out to external pins. as a result special attention regarding initialisation procedures should be paid to these port lines. users should therefore ensure that these i/o pins are setup as inputs with pull high resistors or as outputs to avoid additional power consumption resulting from floating input pins. programming considerations as mcu i/o pin pa4 is used to control the rf transmitter function, care must be taken to manage this pin correctly in the application program. as line pa4 is used to send data to the rf circuitry this multi-function pin line must be correctly setup to function as logic output. to avoid erroneous operation of the rf circuits this line should be setup as an output immediately after power-on. if the cref pin is connected externally to an mcu i/o pin for synchronisation purposes, then this pin must be properly setup as a logic input immediately after power on. as the mcu will be powered down independently of the rf transmitter peripheral module, care must be taken to ensure that the mcu first clears its pa4 line to zero before powering down. this will allow the rf transmitter peripheral module to enter its standby state and thus keep power consumption to a minimum. application circuits note: 1. a 9.84375mhz crystal is used for an rf frequency of 315mhz a 13.56mhz crystal is used for an rf frequency of 433.92mhz 2. the extra lc filter on the paout pin can reduce second order harmonics 3. the bracketed l and c values are for 433.92mhz operation rev. 1.30 10 july 4, 2011 HT66F03T3/ht68f03t3 8-bit flash mcu with rf transmitter
package information 16-pin nsop (150mil) outline dimensions ms-012 symbol dimensions in inch min. nom. max. a 0.228 0.244 b 0.150 0.157 c 0.012 0.020 c
0.386 0.402 d 0.069 e 0.050 f 0.004 0.010 g 0.016 0.050 h 0.007 0.010 0 8 symbol dimensions in mm min. nom. max. a 5.79 6.20 b 3.81 3.99 c 0.30 0.51 c
9.80 10.21 d 1.75 e 1.27 f 0.10 0.25 g 0.41 1.27 h 0.18 0.25 0 8 HT66F03T3/ht68f03t3 8-bit flash mcu with rf transmitter rev. 1.30 11 july 4, 2011 ) 9 ) < ! , + - > & ?
reel dimensions sop 16n (150mil) symbol description dimensions in mm a reel outer diameter 330.01.0 b reel inner diameter 100.01.5 c spindle hole diameter 13.0 +0.5/-0.2 d key slit width 2.00.5 t1 space between flange 16.8 +0.3/-0.2 t2 reel thickness 22.20.2 rev. 1.30 12 july 4, 2011 HT66F03T3/ht68f03t3 8-bit flash mcu with rf transmitter , + ) * -
carrier tape dimensions sop 16n (150mil) symbol description dimensions in mm w carrier tape width 16.00.3 p cavity pitch 8.00.1 e perforation position 1.750.1 f cavity to perforation (width direction) 7.50.1 d perforation diameter 1.55 +0.10/-0.00 d1 cavity hole diameter 1.50 +0.25/-0.00 p0 perforation pitch 4.00.1 p1 cavity to perforation (length direction) 2.00.1 a0 cavity length 6.50.1 b0 cavity width 10.30.1 k0 cavity depth 2.10.1 t carrier tape thickness 0.300.05 c cover tape width 13.30.1 HT66F03T3/ht68f03t3 8-bit flash mcu with rf transmitter rev. 1.30 13 july 4, 2011 - ) ) / - 7 / + / , / % @ % ) a
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HT66F03T3/ht68f03t3 8-bit flash mcu with rf transmitter rev. 1.30 14 july 4, 2011 copyright 2011 by holtek semiconductor inc. the information appearing in this data sheet is believed to be accurate at the time of publication. however, holtek as - sumes no responsibility arising from the use of the specifications described. the applications mentioned herein are used solely for the purpose of illustration and holtek makes no warranty or representation that such applications will be suitable without further modification, nor recommends the use of its products for application that may present a risk to human life due to malfunction or otherwise. holtek
s products are not authorized for use as critical components in life support devices or systems. holtek reserves the right to alter its products without prior notification. for the most up-to-date information, please visit our web site at http://www.holtek.com.tw. holtek semiconductor inc. (headquarters) no.3, creation rd. ii, science park, hsinchu, taiwan tel: 886-3-563-1999 fax: 886-3-563-1189 http://www.holtek.com.tw holtek semiconductor inc. (taipei sales office) 4f-2, no. 3-2, yuanqu st., nankang software park, taipei 115, taiwan tel: 886-2-2655-7070 fax: 886-2-2655-7373 fax: 886-2-2655-7383 (international sales hotline) holtek semiconductor inc. (shenzhen sales office) 5f, unit a, productivity building, no.5 gaoxin m 2nd road, nanshan district, shenzhen, china 518057 tel: 86-755-8616-9908, 86-755-8616-9308 fax: 86-755-8616-9722 holtek semiconductor (usa), inc. (north america sales office) 46729 fremont blvd., fremont, ca 94538, usa tel: 1-510-252-9880 fax: 1-510-252-9885 http://www.holtek.com

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